Formation, migration, and clustering of delocalized vacancies and interstitials at a solid-state semicoherent interface
Atomistic simulations are used to study the formation, migration, and clustering of delocalized vacancies and interstitials at a model fcc-bcc semicoherent interface formed by adjacent layers of Cu and Nb. These defects migrate between interfacial trapping sites through a multistep mechanism that ma...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
American Physical Society,
2012-07-18T15:28:42Z.
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Subjects: | |
Online Access: | Get fulltext |