Interface structure and film polarization in epitaxial SrTiO[subscript 3]/Si(001)
Phenomenological models suggest that thin epitaxial SrTiO[subscript 3] films on silicon will exhibit ferroelectric behavior as a result of compressive strain. However, such models do not include atomic-scale interface effects, which can dramatically alter the predicted behavior. In this paper, we us...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society,
2012-07-20T18:21:21Z.
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| Subjects: | |
| Online Access: | Get fulltext |