Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape
A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-κ/MG and various high-temperature hydrogen annealing processes. Hole mobility enhancement relative to planar SOI devices and universal (100) is observed for 15 nm-diameter circular Si nanowir...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-07-30T12:40:12Z.
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| Subjects: | |
| Online Access: | Get fulltext |