Gigahertz Ambipolar Frequency Multiplier Based on Cvd Graphene

• Main Authors: Wang, Han (Contributor), Hsu, Allen Long (Contributor), Kim, Ki Kang (Contributor), Kong, Jing (Contributor), Palacios, Tomas (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE), 2012-09-14T15:08:49Z.
• Subjects: Article
• Online Access: Get fulltext

Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (>; 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications.
United States. Office of Naval Research. Multidisciplinary University Research Initiative. Graphene Approaches to Terahertz Electronics
Semiconductor Research Corporation. Center for Materials, Structures and Devices