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01665 am a22002413u 4500 |
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73120 |
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|a dc
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|a Kim, Tae-Woo
|e author
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
|e contributor
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|a Kim, Tae-Woo
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|a Kim, Dae-Hyun
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|a del Alamo, Jesus A.
|e contributor
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|a Kim, Dae-Hyun
|e author
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|a del Alamo, Jesus A.
|e author
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|a 60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics
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|b Institute of Electrical and Electronics Engineers (IEEE),
|c 2012-09-24T17:07:01Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/73120
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|a We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact resistance of 7 Ohm-μm and a source resistance of 147 Ohm-μm. The non-alloyed Mo-based ohmic contacts show excellent thermal stability up to 600°C. Using this technology, we have demonstrated a 60 nm gate length self-aligned InGaAs HEMT with g[subscript m] = 2.1 mS/μm at V[subscript DS] = 0.5 V, and f[subscript T] = 580 GHz and f[subscript max] = 675 GHz at V[subscript DS] = 0.6 V. These are all record or near record values for this gate length.
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|a Intel Corporation
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|a Semiconductor Research Corporation. Center for Materials, Structures and Devices
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|a en_US
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|a Article
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|t Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010
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