An unreleased mm-wave resonant body transistor

• Main Authors: Wang, Wentao (Contributor), Popa, Laura Cornelia (Contributor), Marathe, Radhika A. (Contributor), Weinstein, Dana (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE), 2012-10-03T18:59:56Z.
• Subjects: Article
• Online Access: Get fulltext

In this work, we present the first fully unreleased Micro-Electro-Mechanical (MEM) resonator. The 1st harmonic longitudinal resonance of a silicon FinFET fully clad in SiO[subscript 2] is demonstrated. The device exhibits two resonances at 39 and 41 GHz, corresponding well with simulation results. The quality factor (Q) of 129 at 39 GHz is ~4× lower than that of its released counterpart. Methods to improve Q and reduce spurious modes are introduced. This first demonstration of unreleased resonators in a hybrid MEMS-CMOS technology can provide RF and microwave CMOS circuit designers with active high-Q devices monolithically integrated in Front-End-of-Line (FEOL) processing without the need for post-processing or special packaging.
Microelectronics Advanced Research Corporation (MARCO)
United States. Defense Advanced Research Projects Agency