High phosphorous doped germanium: Dopant diffusion and modeling

High phosphorous doped germanium: Dopant diffusion and modeling

The in situ n-type doping of Ge thin films epitaxial grown on Si substrates is limited to 1 × 10[superscript 19] cm[superscript −3] by the phosphorous out-diffusion during growth at 600 °C. By studying the phosphorous diffusion in Ge with different background doping, we find that the diffusion coeff...

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Main Authors: Cai, Yan (Contributor), Bessette, Jonathan T. (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor), Camacho-Aguilera, Rodolfo Ernesto (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2013-07-30T16:46:15Z.
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