Large inherent optical gain from the direct gap transition of Ge thin films

Large inherent optical gain from the direct gap transition of Ge thin films

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ≥1300 cm[superscript −1] at room temperature from both tensile-strained n[superscrip...

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Bibliographic Details
Main Authors: Wang, Xiaoxin (Author), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor), Liu, Jifeng (Author)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2013-07-30T18:41:15Z.
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