Large inherent optical gain from the direct gap transition of Ge thin films
The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ≥1300 cm[superscript −1] at room temperature from both tensile-strained n[superscrip...
Main Authors: | Wang, Xiaoxin (Author), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor), Liu, Jifeng (Author) |
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Other Authors: | MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Institute of Physics (AIP),
2013-07-30T18:41:15Z.
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Subjects: | |
Online Access: | Get fulltext |
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