Infrared absorption of n-type tensile-strained Ge-on-Si

Infrared absorption of n-type tensile-strained Ge-on-Si

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct Γ valley in n[superscript +] Ge-on-Si is reported for the first time to our knowledge. The intervalley absorption edge is in goo...

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Bibliographic Details
Main Authors: Wang, Xiaoxin (Author), Li, Haofeng (Author), Cai, Yan (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor), Liu, Jifeng (Author), Camacho-Aguilera, Rodolfo Ernesto (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: Optical Society of America, 2013-07-30T19:00:06Z.
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