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|a Lin, Hongtao
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|a MIT Materials Research Laboratory
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
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|a Lin, Pao Tai
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|a Singh, Vivek
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|a Agarwal, Anuradha Murthy
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|a Kimerling, Lionel C.
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|a Li, Lan
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|a Zou, Yi
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|a Danto, Sylvain
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|a Musgraves, J. David
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|a Richardson, Kathleen
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|a Kozacik, Stephen
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|a Murakowski, Maciej
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|a Prather, Dennis
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|a Singh, Vivek
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|a Kimerling, Lionel C.
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|a Hu, Juejun
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|a Lin, Pao Tai
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|a Agarwal, Anuradha Murthy
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|a Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators
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|b Optical Society of America,
|c 2013-07-31T14:57:08Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/79737
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|a We demonstrated high-index-contrast, waveguide-coupled As[subscript 2]Se[subscript 3] chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2 × 10[superscript 5] at 5.2 μm wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits.
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|a National Science Foundation (U.S.). (Award 1200406)
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|a National Science Foundation (U.S.). (EPSCoR Grant EPS-0814251)
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|a United States. Dept. of Energy (Contract DE-NA000421)
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|a United States. National Nuclear Security Administration (Defense Nuclear Nonproliferation Research and Development)
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|a en_US
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|a Article
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|t Optics Letters
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