Monolithic Ge-on-Si lasers for integrated photonics

Monolithic Ge-on-Si lasers for integrated photonics

We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility of electrically pumped lasers.

Bibliographic Details
Main Authors: Liu, Jifeng (Contributor), Sun, Xiaochen (Contributor), Cai, Yan (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor), Camacho-Aguilera, Rodolfo Ernesto (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2013-08-05T14:09:03Z.
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