Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with...

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Bibliographic Details
Main Authors: Sun, Xiaochen (Contributor), Liu, Jifeng (Contributor), Kimerling, Lionel C. (Author), Michel, Jurgen (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2013-08-05T20:10:24Z.
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