A Germanium-on-Silicon Laser for on-Chip Applications

A Germanium-on-Silicon Laser for on-Chip Applications

Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.

Bibliographic Details
Main Authors: Michel, Jurgen (Contributor), Liu, Jifeng (Author), Kimerling, Lionel C. (Contributor), Camacho-Aguilera, Rodolfo Ernesto (Contributor), Bessette, Jonathan T. (Contributor), Cai, Yan (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2013-08-14T14:33:45Z.
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