A Germanium-on-Silicon Laser for on-Chip Applications
Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.
Main Authors: | , , , , , |
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Other Authors: | , |
Format: | Article |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2013-08-14T14:33:45Z.
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Subjects: | |
Online Access: | Get fulltext |
Summary: | Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing. |
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