Light extraction in individual GaN nanowires on Si for LEDs
GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light extraction and improved internal quantum efficiency, respectively. In additio...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
SPIE,
2013-09-19T13:32:09Z.
|
| Subjects: | |
| Online Access: | Get fulltext |