Direct-gap optical gain of Ge on Si at room temperature
Lasers on Si are crucial components of monolithic electronic-photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to...
Main Authors: | , , , |
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Other Authors: | , |
Format: | Article |
Language: | English |
Published: |
Optical Society of America,
2013-09-26T20:03:57Z.
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Subjects: | |
Online Access: | Get fulltext |