Direct-gap optical gain of Ge on Si at room temperature
Lasers on Si are crucial components of monolithic electronic-photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to...
| Main Authors: | , , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Optical Society of America,
2013-09-26T20:03:57Z.
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| Subjects: | |
| Online Access: | Get fulltext |