Transparent amorphous silicon channel waveguides and high-Q resonators using a damascene process

We demonstrate a damascene process for fabricating amorphous silicon (a-Si), single-mode optical channel waveguides and high-Q racetrack resonators. This process is compatible with thermal budget limitations for a-Si phase stability. It offers improved optical transmission and facilitates hydrogen e...

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Bibliographic Details
Main Authors: Sun, Rong (Contributor), Cheng, Jing (Contributor), Michel, Jurgen (Contributor), Kimerling, Lionel C. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: Optical Society of America, 2013-10-04T13:45:22Z.
Subjects:
Online Access:Get fulltext
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100 1 0 |a Sun, Rong  |e author 
100 1 0 |a Massachusetts Institute of Technology. Department of Materials Science and Engineering  |e contributor 
100 1 0 |a Massachusetts Institute of Technology. Microphotonics Center  |e contributor 
100 1 0 |a Sun, Rong  |e contributor 
100 1 0 |a Cheng, Jing  |e contributor 
100 1 0 |a Michel, Jurgen  |e contributor 
100 1 0 |a Kimerling, Lionel C.  |e contributor 
700 1 0 |a Cheng, Jing  |e author 
700 1 0 |a Michel, Jurgen  |e author 
700 1 0 |a Kimerling, Lionel C.  |e author 
245 0 0 |a Transparent amorphous silicon channel waveguides and high-Q resonators using a damascene process 
260 |b Optical Society of America,   |c 2013-10-04T13:45:22Z. 
856 |z Get fulltext  |u http://hdl.handle.net/1721.1/81305 
520 |a We demonstrate a damascene process for fabricating amorphous silicon (a-Si), single-mode optical channel waveguides and high-Q racetrack resonators. This process is compatible with thermal budget limitations for a-Si phase stability. It offers improved optical transmission and facilitates hydrogen encapsulation for process integration of a-Si waveguide cores. At 1550 nm , the average measured transmission loss coefficient is 2.5±0.1 dB/cm for the TE mode, comparable with high-quality single crystalline silicon counterparts. The racetrack resonators have mid- 10[superscript 4] to 10[superscript 5] quality factors (Q) and extinction ratios as high as 25 dB . 
546 |a en_US 
655 7 |a Article 
773 |t Optics Letters