Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice

Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice

We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon-phonon scattering from...

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Bibliographic Details
Main Authors: Hofmann, Felix (Contributor), Garg, Jivtesh (Contributor), Maznev, Alexei (Contributor), Jandl, Adam Christopher (Contributor), Bulsara, Mayank (Contributor), Fitzgerald, Eugene A. (Contributor), Chen, Gang (Contributor), Nelson, Keith Adam (Contributor)
Other Authors: Massachusetts Institute of Technology. Materials Processing Center (Contributor), Massachusetts Institute of Technology. Department of Chemistry (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: IOP Publishing, 2013-11-22T15:56:52Z.
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