Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

The two-dimensional spatial distribution of structural degradation of AlGaN/GaN high electron mobility transistors was investigated under high-power electrical stressing using atomic force and scanning electron microscopy. It was found that pits form on the surface of the GaN cap layer at the edges...

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Bibliographic Details
Main Authors:	Li, Libing (Contributor), Joh, Jungwoo (Contributor), Thompson, Carl V. (Contributor), del Alamo, Jesus A. (Contributor)
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format:	Article
Language:	English
Published:	American Institute of Physics (AIP), 2014-04-11T18:32:58Z.
Subjects:	Article
Online Access:	Get fulltext

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