Investigation of possible microcavity effect on lasing threshold of nonradiative-scattering-dominated semiconductor lasers

The effect of enhanced rate of spontaneous emission on gain and lasing threshold of semiconductor microcavity lasers has not been discussed clearly. Some reports have suggested that the lasing threshold in microcavities could possibly be lowered due to the so-called Purcell effect. Here, we argue th...

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Bibliographic Details
Main Authors: Kumar, Sushil (Author), Hu, Qing (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2014-05-01T18:39:55Z.
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