Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltage...

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Bibliographic Details
Main Authors: Gabor, Nathaniel M. (Contributor), Song, Justin Chien Wen (Contributor), Ma, Qiong (Contributor), Nair, Nityan L. (Contributor), Taychatanapat, Thiti (Contributor), Levitov, Leonid (Contributor), Jarillo-Herrero, Pablo (Contributor), Watanabe, Kenji (Author), Taniguchi, Takashi (Author)
Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: American Association for the Advancement of Science (AAAS), 2014-07-22T15:07:38Z.
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