Optimization of Integrated Transistors for Very High Frequency DC-DC Converters

Optimization of Integrated Transistors for Very High Frequency DC-DC Converters

This paper presents a method to optimize integrated lateral double-diffused MOSFET transistors for use in very high frequency (VHF, 30-300 MHz) dc-dc converters. A transistor model valid at VHF switching frequencies is developed. Device parameters are related to layout geometry and the resulting lay...

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Bibliographic Details
Main Authors: Sagneri, Anthony D. (Author), Anderson, David I. (Author), Perreault, David J. (Contributor)
Other Authors: Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems (Contributor), Massachusetts Institute of Technology. School of Engineering (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2014-10-02T17:24:29Z.
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