Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice

We report on electronic transport measurements of dual-gated nanodevices of the low-carrier density topological insulator (TI) Bi[subscript 1.5]Sb[subscript 0.5]Te[subscript 1.7]Se[subscript 1.3]. In all devices, the upper and lower surface states are independently tunable to the Dirac point by the...

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Bibliographic Details
Main Authors: Fatemi, Valla (Contributor), Hunt, Benjamin Matthew (Contributor), Steinberg, Hadar (Contributor), Eltinge, Stephen L. (Contributor), Mahmood, Fahad (Contributor), Butch, Nicholas P. (Author), Watanabe, Kenji (Author), Taniguchi, Takashi (Author), Gedik, Nuh (Contributor), Jarillo-Herrero, Pablo (Contributor), Ashoori, Raymond (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2014-11-17T17:27:07Z.
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