Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces

Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces

High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent...

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Bibliographic Details
Main Authors: Sharma, Prithu (Contributor), Milakovich, Timothy J. (Contributor), Bulsara, Mayank (Contributor), Fitzgerald, Eugene A. (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Electrochemical Society, 2014-11-26T15:18:10Z.
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