Simulation of Crystallization in Ge[subscript 2]Sb[subscript 2]Te[subscript 2]: A Memory Effect in the Canonical Phase-Change Material
Crystallization of amorphous Ge[subscript 2]Sb[subscript 2]Te[subscript 5] (GST) has been studied using four extensive (460 atoms, up to 4 ns) density functional/molecular dynamics simulations at 600 K. This phase change material is a rare system where crystallization can be simulated without adjust...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society,
2014-12-09T21:24:51Z.
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| Subjects: | |
| Online Access: | Get fulltext |