Simulation of Crystallization in Ge[subscript 2]Sb[subscript 2]Te[subscript 2]: A Memory Effect in the Canonical Phase-Change Material
Crystallization of amorphous Ge[subscript 2]Sb[subscript 2]Te[subscript 5] (GST) has been studied using four extensive (460 atoms, up to 4 ns) density functional/molecular dynamics simulations at 600 K. This phase change material is a rare system where crystallization can be simulated without adjust...
Main Authors: | Akola, J. (Author), Jones, R. O. (Author), Kalikka, Janne (Contributor) |
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Other Authors: | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Physical Society,
2014-12-09T21:24:51Z.
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Subjects: | |
Online Access: | Get fulltext |
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