Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread funct...

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Bibliographic Details
Main Authors: Zhang, Lihua (Author), Su, Dong (Author), Duan, Huigao (Author), Stach, Eric A. (Author), Berggren, Karl K. (Contributor), Manfrinato, Vitor Riseti (Contributor), Hobbs, Richard (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2015-01-13T18:46:24Z.
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