All-Metallic Vertical Transistors Based on Stacked Dirac Materials

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed...

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Bibliographic Details
Main Authors: Wang, Yangyang (Author), Ni, Zeyuan (Author), Liu, Qihang (Author), Quhe, Ruge (Author), Zheng, Jiaxin (Author), Ye, Meng (Author), Yu, Dapeng (Author), Shi, Junjie (Author), Yang, Jinbo (Author), Li, Ju (Contributor), Lu, Jing (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor)
Format: Article
Language:English
Published: Wiley Blackwell, 2015-03-05T17:20:47Z.
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