Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2]

Double resonance Raman modes in monolayer and few-layer MoTe[subscript 2]

We study the second-order Raman process of mono- and few-layer MoTe[subscript 2], by combining ab initio density functional perturbation calculations with experimental Raman spectroscopy using 532, 633, and 785 nm excitation lasers. The calculated electronic band structure and the density of states...

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Bibliographic Details
Main Authors: Guo, Huaihong (Author), Yang, Teng (Author), Yamamoto, Mahito (Author), Zhou, Lin (Contributor), Ishikawa, Ryo (Author), Ueno, Keiji (Author), Tsukagoshi, Kazuhito (Author), Zhang, Zhidong (Author), Saito, Riichiro (Author), Dresselhaus, Mildred (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2015-05-13T12:26:16Z.
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