Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface se...

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Bibliographic Details
Main Authors: Recht, Daniel (Author), Smith, Matthew J. (Contributor), Charnvanichborikarn, Supakit (Author), Sullivan, Joseph T. (Contributor), Winkler, Mark T. (Contributor), Mathews, Jay (Author), Warrender, Jeffrey M. (Author), Buonassisi, Tonio (Contributor), Williams, James S. (Author), Gradecak, Silvija (Contributor), Aziz, Michael J. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2015-06-08T18:00:29Z.
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