Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor

Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor

The electron-hole (EH) bilayer tunneling field-effect transistor promises to eliminate heavy-doping band tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency ve...

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Bibliographic Details
Main Authors: Agarwal, Sapan (Author), Teherani, James T. (Contributor), Hoyt, Judy L. (Contributor), Antoniadis, Dimitri A. (Contributor), Yablonovitch, Eli (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2015-11-05T13:25:47Z.
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