Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm[superscript 2] V[superscript −]1s[superscript...

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Main Authors: Zhang, Qian (Author), Chere, Eyob Kebede (Author), McEnaney, Kenneth (Contributor), Yao, Mengliang (Author), Cao, Feng (Author), Ni, Yizhou (Author), Chen, Shuo (Author), Opeil, Cyril (Author), Chen, Gang (Contributor), Ren, Zhifeng (Author)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: Wiley Blackwell, 2015-11-09T16:28:03Z.
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