Low energy ion-surface interaction and epitaxial growth in the SiGe system
The structure of a growing epitaxial film is controlled by the relative rate of different surface processes. Low energy ion beams (50-500 eV) can be used to provide energy to adatoms on the surface and atoms in the near-surface region of a growing film. Thus, a low energy ion beam can be employed as...
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| Format: | Others |
| Language: | en |
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1992
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| Online Access: | https://thesis.library.caltech.edu/3138/1/Tsai_cj_1992.pdf Tsai, Cho-Jen (1992) Low energy ion-surface interaction and epitaxial growth in the SiGe system. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/886t-t311. https://resolver.caltech.edu/CaltechETD:etd-08152007-092600 <https://resolver.caltech.edu/CaltechETD:etd-08152007-092600> |
Internet
https://thesis.library.caltech.edu/3138/1/Tsai_cj_1992.pdfTsai, Cho-Jen (1992) Low energy ion-surface interaction and epitaxial growth in the SiGe system. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/886t-t311. https://resolver.caltech.edu/CaltechETD:etd-08152007-092600 <https://resolver.caltech.edu/CaltechETD:etd-08152007-092600>