Properties of an arbitrarily doped field-effect transistor

Properties of an arbitrarily doped field-effect transistor

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. The properties of p-n junction field-effect transistors (FET's) are formulated on a general basis, in terms of an arbitrary doping profile (i.e. arbitrary gate-channel impurity...

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Bibliographic Details
Main Author: Richer, Ira
Format: Others
Published: 1964
Online Access:https://thesis.library.caltech.edu/3800/1/Richer_i_1964.pdf
Richer, Ira (1964) Properties of an arbitrarily doped field-effect transistor. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/E5RR-2P55. https://resolver.caltech.edu/CaltechETD:etd-09272002-160258 <https://resolver.caltech.edu/CaltechETD:etd-09272002-160258>

Internet

https://thesis.library.caltech.edu/3800/1/Richer_i_1964.pdf
Richer, Ira (1964) Properties of an arbitrarily doped field-effect transistor. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/E5RR-2P55. https://resolver.caltech.edu/CaltechETD:etd-09272002-160258 <https://resolver.caltech.edu/CaltechETD:etd-09272002-160258>

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