Monolithic integration of gallium arsenide optoelectronic devices
The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which permit the fabrication of high speed electronic devices which are superior to conventional silicon devices. This thesis describes three...
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Format: | Others |
Language: | en |
Published: |
1980
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Online Access: | https://thesis.library.caltech.edu/3812/1/Ury_i_1980.pdf Ury, Israel (1980) Monolithic integration of gallium arsenide optoelectronic devices. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/s4x6-kk53. https://resolver.caltech.edu/CaltechETD:etd-09282006-090324 <https://resolver.caltech.edu/CaltechETD:etd-09282006-090324> |
Internet
https://thesis.library.caltech.edu/3812/1/Ury_i_1980.pdfUry, Israel (1980) Monolithic integration of gallium arsenide optoelectronic devices. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/s4x6-kk53. https://resolver.caltech.edu/CaltechETD:etd-09282006-090324 <https://resolver.caltech.edu/CaltechETD:etd-09282006-090324>