Ion-surface interactions and limits to silicon epitaxy at low temperatures
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. Low temperature (T [...] 400°C) deposition of Si on Si(001) proceeds epitaxially up to a finite thickness followed by a crystal-state-amorphous-state transition. An atomistic model,...
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| Format: | Others |
| Language: | en |
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1995
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| Online Access: | https://thesis.library.caltech.edu/4271/1/Murty_mvr_1995.pdf Murty, M. V. Ramana (1995) Ion-surface interactions and limits to silicon epitaxy at low temperatures. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/1vkn-xh33. https://resolver.caltech.edu/CaltechETD:etd-10262007-111208 <https://resolver.caltech.edu/CaltechETD:etd-10262007-111208> |
Internet
https://thesis.library.caltech.edu/4271/1/Murty_mvr_1995.pdfMurty, M. V. Ramana (1995) Ion-surface interactions and limits to silicon epitaxy at low temperatures. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/1vkn-xh33. https://resolver.caltech.edu/CaltechETD:etd-10262007-111208 <https://resolver.caltech.edu/CaltechETD:etd-10262007-111208>