Ion implantation in epitaxial GexSi1-x on Si(100)
The question of whether one can effectively dope or process epitaxial Si(100)/GeSi heterostructures by ion implantation is experimentally investigated. Results that cover several different ion species (Si, P, and As), doses (1.0x10[superscript 13]/cm[superscript 2] to 1.5x10[superscript 15]/cm [supe...
Internet
https://thesis.library.caltech.edu/5065/1/Lie_ycd_1996.pdfLie, Yu-Chun Donald (1996) Ion implantation in epitaxial GexSi1-x on Si(100). Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/6GA1-F433. https://resolver.caltech.edu/CaltechETD:etd-12192007-083658 <https://resolver.caltech.edu/CaltechETD:etd-12192007-083658>