Développement et fabrication de transistors couches minces verticaux en technologie silicium polycristallin basse température
This work deals with the development of vertical thin film transistors (VTFTs) via the fabrication processes and the analysis of the electrical characteristics. The low-temperature (T ≤ 600°C) polycrystalline silicon technology is adopted in the fabrication processes. The first step of the work cons...
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| Language: | fra |
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Université Rennes 1
2012
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| Online Access: | http://tel.archives-ouvertes.fr/tel-00815161 http://tel.archives-ouvertes.fr/docs/00/81/51/61/PDF/Zhang_Peng.pdf |