Numerical study of electro-thermal effects in silicon devices
The ultra-short gate (LG < 20 nm) CMOS components (Complementary Metal-Oxide-Semiconductor) face thermal limitations due to significant local heating induced by phonon emission by hot carriers in active regions of reduced size. This phenomenon, called self-heating effect, is identified as one of...
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| Language: | ENG |
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Université Paris Sud - Paris XI
2013
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| Online Access: | http://tel.archives-ouvertes.fr/tel-00827633 http://tel.archives-ouvertes.fr/docs/00/82/76/33/PDF/VA2_NGHIEM_TRANG_25012013.pdf |