High Power GaN/AlGaN/GaN HEMTs Grown by Plasma-Assisted MBE Operating at 2 to 25 GHz

High Power GaN/AlGaN/GaN HEMTs Grown by Plasma-Assisted MBE Operating at 2 to 25 GHz

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Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-SiC substrates and high electron mobility transistors (HEMTs) were fabricated. For devices with large gate periphery an air bridge technology was developed for the drain contacts of the finger structure...

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Bibliographic Details
Main Authors: Waechtler, Thomas, Manfra, Michael J, Weimann, Nils G, Mitrofanov, Oleg
Language:English
Published: Technische Universität Chemnitz 2005
Subjects:
info:eu-repo/classification/ddc/621
ddc:621
info:eu-repo/classification/ddc/537
ddc:537
HEMT
AlGaN
GaN
High Electron Mobility Transistor
MBE
heterostructure
Online Access:http://nbn-resolving.de/urn:nbn:de:swb:ch1-200500380
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http://nbn-resolving.de/urn:nbn:de:swb:ch1-200500380
https://monarch.qucosa.de/id/qucosa%3A18296
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https://monarch.qucosa.de/api/qucosa%3A18296/attachment/ATT-1/

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