Simulation of diffusion under pressure in bcc metals

This work is devoted to simulation of atom configurations in bcc metals near the point defect using the molecular static method. The values of migration and formation volumes are very sensitive to the atomic structure in the vicinity of a defect, which makes it necessary to consider a large number o...

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Bibliographic Details
Main Authors: Valikova, Irina V., Nazarov, Andrei V.
Other Authors: Moscow Engineering Physics Institute, Department of Material Science
Format: Article
Language:English
Published: Universitätsbibliothek Leipzig 2016
Subjects:
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-194630
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-194630
http://www.qucosa.de/fileadmin/data/qucosa/documents/19463/diff_fund_3%282005%2911.pdf