New Precursors for CVD Copper Metallization

New Precursors for CVD Copper Metallization

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A novel CVD copper process is described using two new copper CVD precursors, KI3 and KI5, for the fabrication of IC or TSV (Through Silicon Via) copper interconnects. The highly conformal CVD copper can provide seed layers for subsequent copper electroplating or can be used to directly fabrica...

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Bibliographic Details
Main Authors: Norman, John A. T., Perez, Melanie, Schulz, Stefan E., Waechtler, Thomas
Other Authors: TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
Format: Article
Language:English
Published: Universitätsbibliothek Chemnitz 2008
Subjects:
3D integration
Chemical Vapor Deposition
Copper
Seed layer
Through silicon via (TSV)
ddc:540
ddc:620
CVD-Verfahren
Elektroniktechnologie
Verkupferung
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346
http://www.qucosa.de/fileadmin/data/qucosa/documents/5652/data/Norman_MicroelectronEng2008.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/5652/20080134.txt

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346
http://www.qucosa.de/fileadmin/data/qucosa/documents/5652/data/Norman_MicroelectronEng2008.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/5652/20080134.txt

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