Thin Films of Copper Oxide and Copper Grown by Atomic Layer Deposition for Applications in Metallization Systems of Microelectronic Devices

Thin Films of Copper Oxide and Copper Grown by Atomic Layer Deposition for Applications in Metallization Systems of Microelectronic Devices

Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-f...

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Bibliographic Details
Main Author: Wächtler, Thomas
Other Authors: TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
Format: Doctoral Thesis
Language:English
Published: Universitätsbibliothek Chemnitz 2010
Subjects:
ALD
Atomic Layer Deposition
Atomlagenabscheidung
Beta-Diketonate
Copper
Copper Oxide
Electroplating
Formic Acid
Metallization
Precursor
Reduction
Tantalum
Tantalum Nitride
Vorstufe
ddc:620
ddc:540
ddc:530
Ameisensäure
Atomschichtepitaxie
Ausgangsmaterial
Diketonate <beta>
Galvanische Abscheidung
Kupfer
Kupferoxide
Metallisierungsschicht
Reduktion
Ruthenium
Tantal
Tantalnitride
ULSI
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000725
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000725
http://www.qucosa.de/fileadmin/data/qucosa/documents/5997/data/Waechtler_Thesis.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/5997/20100072.txt

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000725
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000725
http://www.qucosa.de/fileadmin/data/qucosa/documents/5997/data/Waechtler_Thesis.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/5997/20100072.txt

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