Photoinduced hole trapping in single semiconductor quantum dots at specific sites at silicon oxide interfaces

Photoinduced hole trapping in single semiconductor quantum dots at specific sites at silicon oxide interfaces

Blinking dynamics of CdSe/ZnS semiconductor quantum dots (QD) are characterized by (truncated) power law distributions exhibiting a wide dynamic range in probability densities and time scales both for off- and on-times. QDs were immobilized on silicon oxide surfaces with varying grades of hydroxylat...

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Bibliographic Details
Main Authors: Krasselt, Cornelius, Schuster, Jörg, von Borczyskowski, Christian
Other Authors: TU Chemnitz, Fakultät für Naturwissenschaften
Format: Article
Language:English
Published: Universitätsbibliothek Chemnitz 2013
Subjects:
Lumineszenz-Unterbrechung
Blinking
Halbleiter
Quantenpunkt
Nanopartikel
CdSe/ZnS
Einzelteilchen-Detektion
Siliziumoxid
trap Zustände
Loch trapping
Photoluminescence intermittency
semiconductor quantum dots
single particle detection
silicon oxide
trap states
hole trapping
ddc:539
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-122745
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-122745
http://www.qucosa.de/fileadmin/data/qucosa/documents/12274/Cornelius_Krasselt_hole_trapping.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/12274/signatur.txt.asc

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-122745
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-122745
http://www.qucosa.de/fileadmin/data/qucosa/documents/12274/Cornelius_Krasselt_hole_trapping.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/12274/signatur.txt.asc

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