Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison

Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison

Integration of dielectrics with increased porosity is required to reduce the capacitance of interconnects. However, the conventional dual damascene integration approach is causing negative effects to these materials avoiding their immediate implementation. A post-CMP curing approach could solve some...

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Bibliographic Details
Main Authors: Calvo, Jesús, Koch, Johannes, Thrun, Xaver, Seidel, Robert, Uhlig, Benjamin
Other Authors: TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
Format: Others
Language:English
Published: Universitätsbibliothek Chemnitz 2016
Subjects:
porous
low-k
integration
CMP
curing
ddc:620
Low-k-Dielektrikum
Integration
Chemisch-mechanisches Polieren
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207108
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207108
http://www.qucosa.de/fileadmin/data/qucosa/documents/20710/Calvo_Porous_Ultra_Low-k_Material_Integration_Through_An_Extended_Dual_Damascene_Approach.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/20710/signatur.txt.asc

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207108
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207108
http://www.qucosa.de/fileadmin/data/qucosa/documents/20710/Calvo_Porous_Ultra_Low-k_Material_Integration_Through_An_Extended_Dual_Damascene_Approach.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/20710/signatur.txt.asc

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