Behavior of Copper Contamination for Ultra-Thinning of 300 mm Silicon Wafer down to <5 μm
Bumpless interconnects and ultra-thinning of 300 mm wafers for three-dimensional (3D) stacking technology has been studied [1, 2]. In our previous studies, wafer thinning effect using device wafers less than 10 μm was investigated [3, 4]. There was no change for the retention time before and after t...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Others |
| Language: | English |
| Published: |
Universitätsbibliothek Chemnitz
2016
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| Subjects: | |
| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207317 http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207317 http://www.qucosa.de/fileadmin/data/qucosa/documents/20731/Mizushima_Behavior_of_Copper_Contamination_for_Ultra-Thinning_of_300_mm_Silicon_Wafer_down_to_5_%3Cum.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/20731/signatur.txt.asc |
Internet
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207317http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207317
http://www.qucosa.de/fileadmin/data/qucosa/documents/20731/Mizushima_Behavior_of_Copper_Contamination_for_Ultra-Thinning_of_300_mm_Silicon_Wafer_down_to_5_%3Cum.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/20731/signatur.txt.asc