Quantitative dopant profiling in semiconductors: A new approach to Kelvin probe force microscopy
Failure analysis and optimization of semiconducting devices request knowledge of their electrical properties. To meet the demands of today’s semiconductor industry, an electrical nanometrology technique is required which provides quantitative information about the doping profile and which enables sc...
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| Format: | Others |
| Language: | English |
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Forschungszentrum Dresden
2013
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| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-97372 http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-97372 http://www.qucosa.de/fileadmin/data/qucosa/documents/9737/17893.pdf |