Ion-induced stress relaxation during the growth of cubic boron nitride thin films

Ion-induced stress relaxation during the growth of cubic boron nitride thin films

The aim of the presented work was to deposit cubic boron nitride thin films by magnetron sputtering under simultaneous stress relaxation by ion implantation. An in situ instrument based on laser deflectometry on cantilever structures and in situ ellipsometry, was used for in situ stress measurements...

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Bibliographic Details
Main Author: Abendroth, Barbara
Other Authors: Technische Universität Dresden, Mathematik und Naturwissenschaften, Physik, Institut für Angewandte Physik
Format: Doctoral Thesis
Language:English
Published: Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden 2004
Subjects:
Biegebalken
Kubisches Bornitrid
Magnetronsputtern
Spannungen
Spannungsrelaxation
XANES
XRD
in situ Analytik
cantilever bending
cubic boron nitride
in situ analysis
magnetron sputtering
stress
stress relaxation
ddc:530
rvk:UP 7750
133078
Bornitrid
Dünne Schicht
Röntgendiffraktometrie
Online Access:http://nbn-resolving.de/urn:nbn:de:swb:14-1093520583562-40470
http://nbn-resolving.de/urn:nbn:de:swb:14-1093520583562-40470
http://www.qucosa.de/fileadmin/data/qucosa/documents/1172/1093520583562-4047.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:swb:14-1093520583562-40470
http://nbn-resolving.de/urn:nbn:de:swb:14-1093520583562-40470
http://www.qucosa.de/fileadmin/data/qucosa/documents/1172/1093520583562-4047.pdf

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